@article {2561, title = {Dimensions of luminescent oxidized and porous silicon structures.}, journal = {Physical Review Letters}, volume = {72}, year = {1994}, month = {1994 Apr 18}, pages = {2648-51}, abstract = {

X-ray absorption measurements from H-passivated porous Si and from oxidized Si nanocrystals, combined with electron microscopy, ir absorption, α recoil, and luminescence emission data, provide a consistent structural picture of the species responsible for the visible luminescence observed in these samples. The mass-weighted average structures in por-Si are particles, not wires, with dimensions significantly smaller than previously reported or proposed.

}, issn = {1079-7114}, author = {Schuppler, S and Friedman, SL and Marcus, MA and Adler, DL and Xie, Y and Ross, FM and Harris, T D and Brown, WL and Chabal, YJ and Brus, LE and Citrin, PH} } @article {2562, title = {Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces.}, journal = {Physical Review Letters}, volume = {71}, year = {1993}, month = {1993 Oct 4}, pages = {2280-83}, abstract = {

Polarized angle-resolved Raman spectra of the Si-H stretching vibrations on stepped H-terminated Si(111) surfaces confirm the constrained orientation of the step dihydride derived from ab initio cluster calculations. They further show that the step normal modes involve little concerted motion of the step atoms, indicating that step relaxation reduces the steric interaction much further than predicted.

}, issn = {1079-7114}, author = {Hines, MA and Chabal, YJ and Harris, T D and Harris, AL} }