@article {2562,
	title = {Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces.},
	journal = {Physical Review Letters},
	volume = {71},
	year = {1993},
	month = {1993 Oct 4},
	pages = {2280-83},
	abstract = {<p>Polarized angle-resolved Raman spectra of the Si-H stretching vibrations on stepped H-terminated Si(111) surfaces confirm the constrained orientation of the step dihydride derived from <em>ab initio</em> cluster calculations. They further show that the step normal modes involve little concerted motion of the step atoms, indicating that step relaxation reduces the steric interaction much further than predicted.</p>
},
	issn = {1079-7114},
	author = {Hines, MA and Chabal, YJ and Harris, T D and Harris, AL}
}
